搜索结果: 1-14 共查到“工学 epitaxy”相关记录14条 . 查询时间(0.049 秒)
Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy
Biochemical engineering Green chemistry Sustainable chemistry Universities of Applied Sciences
2016/12/2
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP) nanowire (NW) arrays on silicon (Si), using chemical beam epitaxy (CBE). The vertical alignment of GaP ...
Molecular dynamics simulation of the thermaldynamic effects versus Ge content x in Si1-xGex/Si（100）epitaxy growth
Molecular dynamics simulation epitaxy critical layer thickness Si1-xGex
2007/5/15
The Molecular Dynamics Simulation of epitaxial process of Si1-xGex/Si(100) was carried out by utilizing the Stillinger-Weber potential and Gear algorithm. The thermal dynamic effects due to different ...
The hole transport properties of nitrogen doped p-type ZnO grown on c-plane sapphire c-Al2O3 were investigated by temperature-dependent Hall-effect measurements. The experimental Hall mobility was f...
Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
Hall sensors magnetoresistors InGaAs/InP heterostructures electronic transport geometric correction factor molecular beam epitaxy (MBE)
2011/4/27
In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric cor...
Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy
oval defects A3B5 molecular beam epitaxy (MBE) spectrally resolved photoluminescence
2011/4/27
A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations were per...
Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique
GaN photoreflectance photoluminescence electric field
2011/4/27
The room temperature photoreflectance (PR) spectroscopy was used to investigate thick GaN epitaxial layers. The GaN layers were grown by hydride vapour phase epitaxy (HVPE) technique and compared to t...
Deep centers in InGaAs/InP layers grown by molecular beam epitaxy
InGaAs deep centers deep level transient spectroscopy (DLTS)
2011/4/27
The deep level transient spectroscopy (DLTS) method was applied to study deep centers in lattice mismatched InGaAs/InP layers grown by molecular beam epitaxy. The composition and the strain state of t...
Thin films of ZnO and ZnMnO by atomic layer epitaxy
ZnO magnetism low temperature growth organic precursors
2011/4/27
We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction,...
Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band
InGaAs quantum-well lasers, molecular beam epitaxy, optical pyrometry
2011/4/27
The paper deals with selected problems of molecular beam epitaxy (MBE) technology of fabrication of 980-nm strained InGaAs quantum-well (QW) lasers. Special attention has been paid to the growth of ac...
GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy
Negative differential resistance Avalanche multiplication
2010/12/8
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetr...
Molecular Beam Epitaxy of HgCdTe for IR FPAs Detectors
Molecular Beam Epitaxy HgCdTe IR FPAs Detectors
2010/7/15
The recent progress in MBE growth of HgCdTe at the Epitaxy Research Center for Advanced Materials, and the National Laboratory for Infrared Physics is reported. It is found that the excellent composit...
N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy
N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Molecular Beam Epitaxy
2010/12/10
N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double het...
Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
AlGaInP/GaInP Laser Molecular Beam Epitaxy
2010/12/10
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two ki...